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OTFT, IGZO, LTPS & a-Si TFT and OLED

What are the differences between IGZO model and A-Si model?
Answer:

From the model point of view, the differences between a-Si TFT model and IGZO model are
  • Relations between subgap DOS (density of state) and effective mobility are not clear because the fitting equations are used.
  • In a-Si TFTs, localized charge is significantly larger than free-carrier charge because of the energy-band distribution. Therefore, the localized charge accounts for the majority of the total charge is widely used.
  • Weak Vgs dependence of effective mobility, and
  • A-Si TFT model is derived based on terminal voltages.

What could be an ideal IGZO model?
Answer:

The ideal IGZO model could be
  • The surface potential based mobility model at a given location can reflect a strong Vgs dependence and clarify the relations between process-controlled DOS and mobility.
  • In IGZO TFT, The effect that localized charge is smaller than free-carrier charge out of the total induced charge is included.
  • Single current equation is used for IGZO TFT model, not modeled by operation point.
  • Surface potential based current model are used for IGZO.












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